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Ordering number:ENN6307A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2013/2SC5566
DC/DC Converter Applications
Applications
* Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm 2038A
[2SA2013/2SC5566]
4.5 1.6 1.5
Features
* Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package facilitates miniaturization in end products. * High allowable power dissipation.
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Mounted on a ceramic board (250mm2x0.8mm) Tc=25C
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Conditions
Ratings (-50)80 (-)50 (-)6 (-)4 (-)7 (-)600 1.3 3.5 150 -55 to +150
Unit V V V A A mA W W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (360) 400 (24)15 Conditions Ratings min typ max (-)1 (-)1 560 MHz MHz pF Unit A A
Continued on next page. Marking : 2SA2013 : AT 2SC5566 : FC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501TS KT TA-3260 No.6307-1/5
2SA2013/2SC5566
Continued on preceding page.
Parameter Symbol Conditions IC=(-)1A, IB=(-)50mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(-)2A, IB=(-)100mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) IC=(-)2A, IB=(-)100mA (-50) 80 (-)50 (-)6 (30)35 (230) 300 (15)20 Ratings min typ (-105) 85 (-200) 150 (-)0.89 max (-180) 130 (-340) 225 (-)1.2 Unit mV mV mV mV V V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR10 50 RB + 100F VBE=--5V + 470F VCC=25V IB1 IB2 OUTPUT 25
10IB1= --10IB2= IC=1A (For PNP, the polarity is reversed.)
--4
IC -- VCE
2SA2013 --90mA --80mA --70mA --60mA
--10 0mA
Collector Current, IC - A
4
IC -- VCE
90mA
70 mA
60mA
Collector Current, IC - A
--3
--
mA --50 A --40m 30mA
--20mA
80mA
3
50mA 40mA
30mA
--2
2
100mA
20mA
10mA
--10mA
--1
1
0 0 --0.4 --0.8 --1.2 --1.6
IB=0
--2.0 IT00152
0 0
2SC5566
0.4 0.8 1.2 1.6
IB=0
2.0 IT00153
Collector-to-Emitter Voltage, VCE - V
--4.0 --3.5
Collector-to-Emitter Voltage, VCE - V
4.0 3.5
IC -- VBE
2SA2013 VCE=--2V
Collector Current, IC - A
IC -- VBE
2SC5566 VCE=2V
Collector Current, IC - A
--3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
3.0 2.5 2.0 1.5 1.0 0.5 0
25C
25C
C
Ta= 75C
Ta= 75
--25
0
0.2
0.4
0.6
0.8
--25C
1.0
C
1.2
1.4 IT00155
Base-to-Emitter Voltage, VBE - V
IT00154
Base-to-Emitter Voltage, VBE - V
No.6307-2/5
2SA2013/2SC5566
1000 7 5
hFE -- IC
2SA2013 VCE=--2V Ta=75C 25C --25C
1000 7 5 3 2
hFE -- IC
Ta=75C 2SC5566 VCE=2V
DC Current Gain, hFE
2
DC Current Gain, hFE
3
--25C 25C
100 7 5 3 2
100 7 5 3 2
10 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC - A
--1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
5 7 --10 IT00156
10 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5 7 10 IT00157
VCE(sat) -- IC
2SA2013 IC / IB=20
VCE(sat) -- IC
2SC5566 IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
Ta
--25C
C =75
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
7 Ta=
5 C
25C
25C
--25C
Collector Current, IC - A
--10000 7 5 3 2
5 7 --10 IT00158
Collector Current, IC - A
10000
5 7 10 IT00160
VCE(sat) -- IC
2SA2013 IC / IB=50
VCE(sat) -- IC
2SC5566 IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
7 5 3 2
--1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3
1000 7 5 3 2 100 7 5 3 2 10 0.01 2 3
5 Ta=7
C
--25C
25C
2 3 5 7 --1.0 2 3 5 7 --10 IT00159
5C Ta=7 C --25
5 7 0.1 2 3
25C
5 7 --0.1
5 7 1.0
2
3
Collector Current, IC - A
--10 7
Collector Current, IC - A
10
5 7 10 IT00161
VBE(sat) -- IC
2SA2013 IC / IB=50
Base-to-Emitter Saturation Voltage, VBE (sat) - V
VBE(sat) -- IC
2SC5566 IC / IB=50
7 5 3 2 1.0 7 5 3 2 0.1 0.01
Base-to-Emitter Saturation Voltage, VBE (sat) - V
5 3 2
--1.0 7 5 3 2
Ta=--25C
Ta=--25C
75C
25C
75C
25C
--0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC - A
5 7 --10 IT00162
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
5 7 10 IT00163
No.6307-3/5
2SA2013/2SC5566
5 3
Cob -- VCB
2SA2013 f=1MHz
5 3
Cob -- VCB
2SC5566 f=1MHz
Output Capacitance, Cob - pF
2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7 --100 IT00164
Output Capacitance, Cob - pF
2 100 7 5 3 2 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
1000
Collector-to-Base Voltage, VCB -- V
1000
5 7 100 IT00165
f T -- IC
2SA2013 VCE=--10V
f T -- IC
2SC5566 VCE=10V
Gain-Bandwidth Product, fT - MHz
Gain-Bandwidth Product, fT - MHz
7 5 3 2
7 5 3 2
100 7 5 3 2
100 7 5 3 2
10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
10
Collector Current, IC - A
2 10 7 5
5 7 --10 IT00166
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
2.0
5 7 10 IT00167
ASO
ICP=7A IC=4A 100ms
10 1ms ms
DC
PC -- Ta
2SA2013 / 2SC5566
3 2 1.0 7 5 3 2 0.1 7 5 3 2
Collector Dissipation, PC - W
Collector Current, IC - A
50 0 s
s 0 10
1.5 1.3
M
op
ou
era tio n
nte
1.0
do
na
ce
ram
ic
bo
ard
0.01 0.1
2SA2013 / 2SC5566 Tc=25C Single pulse For PNP, the minus sign is omitted
2 3 5 7 1.0 2 3 5 7 10 2 3
0.5
(25
0m
m2 x0
.8m
m)
140 160
0 5 7 100 IT00168 0 20 40 60 80 100 120
Collector-to-Emitter Voltage, VCE - V
4.0 3.5
Ambient Temperature, Ta - C
IT00169
PC -- Tc
2SA2013 / 2SC5566
Collector Dissipation, PC - W
3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc - C
IT01533
No.6307-4/5
2SA2013/2SC5566
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS No.6307-5/5

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